Chapters in books:
2 Matkovskii A.O., Shpotyuk O.I., Vakiv M.M., Kovalskiy A.P. Radiation-stimulated changes of materials properties. Chalcogenide vitreous semiconductors. In book: Matkovskii A.O., Sugak D.Yu., Ubizskii S.B., Shpotyuk O.I., Tshornyj E.A., Vakiv M.M., Mokritskii V.A. Effect of ionizing irradiations on electronic materials / Ed. A.O. Matkovskii. Lviv: Svit. 1994, p. 158-180. (in Russian)
1 Shpotyuk O.I., Kovalskiy A.P., Sawicki I.V., Matkovskii A.O. Photo- and radiation-chemical transformations in chalcogenide vitreous semiconductors. In book: Materials and devices for hologram registration / Ed. V.A. Barachevsky. Leningrad: Leningrad State Univ. 1986, p. 12-17. (in Russian)
Papers in peer-reviewed journals:
78. Kovalskiy A., Neilson J.R., Miller A.C., Miller F.C., Vlcek M., Jain H. Comparative study of electron- and photo-induced structural transformations on the surface of As35S65 amorphous thin films. Thin Solid Films, 2008, (in press).
77 Kovalskiy A., Miller A., Jain H., Mitkova M. In-situ measurements of X-ray induced silver diffusion into Ge30Se70 thin film. Journal of the American Ceramic Society, vol. 91 (3), 2008, p. 760-765.
76 Golovchak R., Kovalskiy A., Miller A., Jain H., Shpotyuk O. Structure of Se-rich As-Se glasses by high-resolution photoelectron spectroscopy. Physical Review B, vol. 76 (12), 2007, p. 125208-1-7.
75 Kovalskiy A., Jain H., Neilson J.R., Vlcek M., Waits C.M., Churaman W., Dubey M. On the mechanism of gray scale patterning of Ag-containing As2S3 thin films. Journal of Physics and Chemistry of Solids, vol. 68, 2007, p. 920-925.
74 Neilson J.R., Kovalskiy A., Vlcek M., Jain H., Miller F. Fabrication of nano-gratings in arsenic sulphide films. Journal of Non-Crystalline Solids, vol. 353, 2007, p. 1427-1430.
73 Shpotyuk O., Kovalskiy A., Golovchak R., Zurawska A., Jain H. Radiation-induced defects in chalcogenide glasses characterized by optical spectroscopy, XPS and PALS methods. Physica Status Solidi C, vol. 4, 2007, p. 1147-1150.
72 Balitska V., Kovalskiy A., Shpotyuk O., Vakiv M. On the instability effects in radiation-sensitive chalcogenide glasses. Radiation Measurements, vol. 42, 2007, p. 941-943.
71 Kovalskiy A., Jain H., Miller A., Golovchak R., Shpotyuk O. A study of reversible gamma-induced structural transformations in vitreous Ge23.5Sb11.8S64.7 by high resolution X-ray photoelectron spectroscopy. Journal of Physical Chemistry B, vol. 110, 2006, p. 22930-22934.
70 Kovalskiy A., Vlcek M., Jain H., Fiserova A., Waits C.M., Dubey M. Development of chalcogenide glass photoresists for gray scale lithography. Journal of Non-Crystalline Solids, vol. 352, 2006, p. 589-594.
69 Jain, H., Kovalskiy, A., Miller, A. An XPS study of the early stages of silver photodiffusion in Ag/a-As2S3 films. Journal of Non-Crystalline Solids, vol. 352, 2006, p. 562-566.
68 Shpotyuk O., Kovalskiy A., Filipecki J., Kavetskyy T., Popescu M. Positron annihilation lifetime spectroscopy as experimental probe of free volume concepts in network glasses. Physics and Chemistry of Glasses: European Journal of Glass Science and Technology: Part B, vol. 47, 2006, p. 131-135.
67 Shpotyuk O., Kovalskiy A., Filipecki J. The application of radiation modification route for chalcogenide glasses. World Glass Plants and Accessories, vol. 4, 2005, p. 90-92.
66 Kozdras A., Filipecki J., Hyla M., Shpotyuk O., Kovalskiy A., Szymura S. Nanovolume positron traps in glassy-like As3Se3. Journal of Non-Crystalline Solids, vol. 351, 2005, p. 1077-1081.
65 Shpotyuk O., Kovalskiy A., Kavetskyy T., Golovchak R. Threshold restoration effects in gamma-irradiated chalcogenide glasses. Journal of Non-Crystalline Solids, vol. 351, 2005, p. 993-997.
64 Kavetskyy T., Shpotyuk O., Kovalskiy A., Tsmots V. Structural-chemical approach for compositional dependences of gamma-induced optical effects in chalcogenide glasses of Ge-Sb-S system. Journal of Optoelectronics and Advanced Materials, vol. 5, 2005, p. 2299-2308.
63 Kozdras A., Shpotyuk O., Kovalskiy A., Filipecki J. Modified positron annihilation model for glassy-like As2Se3. Acta Physica Polonica A, vol. 107, 2005, p. 832-836.
62 Kovalskiy A., Shpotyuk O., Golovchak R., Vakiv M. Post-irradiation relaxation of radiation-induced changes of optical absorption in chalcogenide glasses of Ge-As-S system. Sensor Electronics and Microsystem Technologies, No 1, 2005, p. 52-56. (in Russian)
61 Vakiv M., Golovchak R., Kovalskiy A., Shpotyuk O. Conditions for application of chalcogenide vitreous alloys in the dosimetry of high-energetic gamma-quanta. Technology and Design in Electronic Devices, No 1 (55), 2005, p. 60-61. (in Russian)
60 Kozdras A., Filipecki J., Hyla M., Shpotyuk O., Kovalskiy A. Positron trapping nanovolumes in glassy As2Se3. Scientific Works of Pedagogical University of Czestochowa. Chemistry, 2004, v. 8, p. 67-76.
59 Kovalskiy A. Compositional trends of radiation induced effects in ternary systems of chalcogenide glasses. Radiation Effects & Defects in Solids, vol. 158, 2003, p. 391-397.
58 Shpotyuk O., Kovalskiy A., Filipecki J., Hyla M., Kozdras A. A nanoscale characterisation of extended defects in glassy-like As2Se3 semiconductors with PAL technique. Physica B, vol. 340-342, 2003, p. 960-964.
57 Shpotyuk O., Kovalskiy A., Kavetskyy T., Golovchak R. Post-irradiation thermally stimulated recovering of some ternary chalcogenide glasses. Journal of Optoelectronics and Advanced Materials, vol. 5, No 5, 2003, p. 1169-1179.
56 Shpotyuk O., Kovalskiy A., Kavetskyy T., Golovchak R., Popescu M. Chemical interaction of chalcogenide vitreous semiconductors with absorbed impurities induced by gamma-irradiation. Journal of Optoelectronics and Advanced Materials, vol. 5, No 5, 2003, p. 1181-1185.
55 Filipecki J., Shpotyuk O.I., Kozdras A., Kovalskiy A. Positron lifetime study of native vacancy-like defects in chalcogenide glasses. Radiation Physics and Chemistry, vol. 68, No 3-4, 2003, p. 557-559.
54 Balitska V., Golovchak R., Kovalskiy A., Skordeva E., Shpotyuk O. Effect of Co60 gamma-irradiation on the optical properties of As-Ge-S glasses. Journal of Non-Crystalline Solids, vol. 326-327, 2003, p. 130-134.
53 Shpotyuk O., Golovchak R., Kovalsky A., Kavetskyy T. Time and temperature stability of radiation-induced changes in optical properties of ternary chalcogenide glassy semiconductor systems. Functional Materials, vol. 10, No 2, 2003, p. 317-322.
52 Kovalskiy A., Kavetskyy T., Plewa J., Shpotyuk O. Interpretation of radiation-induced phenomena in chalcogenide glasses of Ge–Sb–S system using free volume and covalent chemical bonds concepts. Solid State Phenomena, vol. 90-91, 2003, p. 241-246.
51 Shpotyuk O., Filipecki J., Kozdras A., Kovalskiy A. Coordination positron-trapping centers in vitreous chalcogenide semiconductors. Physica Status Solidi C, vol. 0, No 2, 2003, p. 795-798.
50 Shpotyuk O., Kavetskyy T., Kovalskiy A. Phenomenological model of radiation-induced optical effects in Sb2S3-GeS2(Ge2S3) chalcogenide glasses. Proceedings SPIE, 2003, vol. 5122, p. 95-103.
49 Shpotyuk O., Filipecki J., Golovchak R., Kovalskiy A., Hyla M. Application of positron annihilation lifetime technique for gamma-irradiation stresses study in chalcogenide vitreous semiconductors. Advanced Engineering Materials, 2002, v. 4, No 8, p. 571-574.
48 Shpotyuk O., Golovchak R., Kovalskiy A., Pamukchieva V., Skordeva E., Arsova D. On the mechanism of radiation-induced optical effects in vitreous As2S3-GeS2. Ukrainian Journal of Physical Optics, 2002, v. 3, No 2, p. 134-143.
47 Shpotyuk O., Kovalskiy A. Compositional trends in radiation-optical properties of chalcogenide glasses. Journal of Optoelectronics and Advanced Materials, 2002, v. 4, No. 3, p. 751-762.
46 Shpotyuk O., Kovalskiy A., Filipecki J., Kozdras A. The native open-volume microvoids concept in positron lifetime spectroscopy of chalcogenide vitreous semiconductors. Bulletin of Lviv University, Part physical, v. 35, 2002, p. 208-211.
45 Kovalskiy A. Determination of concentration of radiation-induced structural defects in chalcogenide vitreous semiconductors. Physical Transactions of the Taras Schevchenko Scientific Society, v. 5, 2002, p. 35-40. (in Ukrainian)
44 Kovalskiy A.P. Influence of high-energetic gamma-radiation on optical properties of chalcogenide glass system As-Sb-S. Bulletin of the National University „Lviv Polytechnics”. Electronics, 2002, No 455, p. 28-33. (in Ukrainian)
43 Shpotyuk O.I., Balitska V.O., Vakiv M.M., Golovchak R.Ya., Kavetskyy T.S., Kovalskiy A.P., Matkovskii A.O. Radiation-induced phenomena in chalcogenide vitreous semiconductors (Short review). Bulletin of the National University „Lviv Polytechnics”. Electronics, 2002, No 459, p. 179-193. (in Ukrainian)
42 Shpotyuk O., Filipecki J., Hyla M., Kovalskiy A., Golovchak R. Coordination defects in chalcogenide amorphous semiconductors studied by positron annihilation lifetime. Physica B, 2001, v. 308-310, p. 1011-1014.
41 Kovalskiy A.P. Compositional features of gamma-induced changes of optical properties for ternary systems of chalcogenide vitreous semiconductors. Bulletin of the National University „Lviv Polytechnics”. Electronics, 2001, No 430, p. 3-10. (in Ukrainian)
40 Shpotyuk O., Kavetskyy T., Filipecki J., Kovalskiy A., Pamukchieva V. Radiation-induced optical effects in Sb2S3-GeS2 chalcogenide glasses. Scientific Works of Pedagogical University of Czestochowa. Chemistry, 2001, v. 5, p. 189-195.
39 Shpotyuk O., Kovalskiy A., Mrooz O., Shpotyuk L., Pekhnyo V., Volkov S. Technological modification of spinel-based CuxNi1-x-yCo2yMn2-yO4 ceramics. Journal of the European Ceramic Society, 2001, v.21, p. 2067-2070.
38 Mrooz O., Kovalski A., Pogorzelska J., Shpotyuk O., Vakiv M., Butkiewicz B., Maciak J. Thermoelectrical degradation processes in NTC thermistors for in-rush current protection of electronic circuits. Microelectronics Reliability, 2001, v. 41, p. 773-777.
37 Butkiewicz B., Golovchak R., Kovalskiy A., Shpotyuk O., Vakiv M. On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses. Radiation Effects & Defects in Solids, 2001, v. 153, p. 211-219.
36 Shpotyuk O.I., Filipecki J., Golovchak R.Ya., Kovalskiy A.P., Hyla M. Radiation-defects in amorphous As-Ge-S studied by positron annihilation techniques. Journal of Optoelectronics and Advanced Materials, 2001, v. 3, No 2, p. 329-332.
35 Kovalskiy A. Peculiarities of gamma-induced optical effects in ternary systems of amorphous chalcogenide semiconductors. Journal of Optoelectronics and Advanced Materials, 2001, v. 3, No 2, p. 323-327.
34 Shpotyuk O., Hadzaman I., Mrooz O., Kovalskiy A., Vakiv M. Microscopic characterization of manganese-containing oxide ceramics for current protection of electric circuits. Practical Metallography, 2001, v. 32, p. 209-212.
33 Shpotyuk O.I., Kavetsky T.S., Kovalskiy A.P., Lutciv R.V., Pamukchieva V.D. Radiation-induced changes of optical transmittance in vitreous semiconductors of GexSb40-xS60 system. Ukrainian Journal of Physics, 2001, v. 46, No 4, p. 495-498. (in Ukrainian)
32 Shpotyuk O.I., Golovchak R.Ya., Kovalskiy A.P., Vakiv M.M., Pamukchieva V.D., Arsova D.D., Skordeva E.R. Radiation optical effects in As2S3-GeS2 semiconducting glasses. Physics and Chemistry of Glasses, 2001, v. 42, No 2, p. 95-98.
31 Shpotyuk O., Kavetskyy T., Kovalskiy A., Pamukchieva V. IR optical properties of Sb2S3-GeS2(Ge2S3) chalcogenide glasses and effect of gamma-irradiation. Proceedings SPIE, 2001, vol. 4415, p. 272-277.
30 Shpotyuk O., Kavetskyy T., Kovalskiy A., Pamukchieva V. Gamma-irradiation effect on the optical properties of GexSb40-xS60 chalcogenide glasses. Proceedings SPIE, 2001, vol. 4415, p. 278-283.
29 Shpotyuk O., Vakiv M., Kovalskiy A.P., Skordeva E., Vateva E., Pamukchieva V., Golovchak R., Lutciv R. Radiation-induced effects in Ge-As-S chalcogenide glasses. Glass Physics and Chemistry, 2000, v. 26, No 3, p. 374-380.
28 Skordeva E., Arsova D., Pamukchieva V., Vateva E., Golovchak R., Kovalskiy A.P., Shpotyuk O. gamma-induced changes in Ge-As-S glasses. Journal of Optoelectronics and Advanced Materials, 2000, v.2, No 3, p. 259-266.
27 Vynnik I.B., Dunets B.V., Kovalsky A.P. Ceramic humidity sensitive elements with intelligent tester of informative parameters. Functional Materials, 2000, v. 7, no 2, p. 319-322.
26 Shpotyuk O.I., Golovchak R.Ya., Kavetsky T.S., Kovalskiy A.P., Vakiv M.M. Radiation-optical effects in glassy Ge-As(Sb)-S systems. Nuclear Instruments and Methods in Physics Research Section B - Beam Interaction with Materials & Atoms, 2000, v. 166-167, p. 517-520.
25 Kovalskiy A.P., Shpotyuk O.I., Hadzaman I.V., Mrooz O.Ya., Vakiv M.M. The influence of gamma-irradiation on electrophysical properties of spinel-based oxide ceramics. Nuclear Instruments and Methods in Physics Research B - Beam Interaction with Materials & Atoms, 2000, v. 166-167, p. 289-292.
24 Kavetskyy T.S., Kovalskiy A.P., Pamukchieva V.D., Shpotyuk O.I. IR impurity absorption in Sb2S3-GeS2(Ge2S3) chalcogenide glasses. Infrared Physics & Technology, 2000, v. 41, p. 41-45.
23 Shpotyuk O.I., Kovalskiy A.P., Skordeva E., Vateva E., Arsova D., Golovchak R.Ya., Vakiv M.M. Effect of gamma-irradiation on the optical properties of GexAs40-xS60 glasses. Physica B. Condensed Matter, 1999, v.271, p. 242-247.
22 Shpotyuk O.I., Skordeva E., Golovchak R.Ya., Pamukchieva V., Koval’skii A.P. Radiation-stimulated changes of transmission in As2S3-Ge2S3 chalcogenide glasses. Journal of Applied Spectroscopy, 1999, v.66, No 5, p. 657-660.
21 Hyla M., Mandecki Z., Filipecki J., Szpotiuk O., Mroz O., Kowalski A. Radial distribution function for amorphous semiconductors of As-Ge-S system. Scientific Works of Pedagogical University of Czestochowa. Chemistry, v. 3, 1999, p. 166-176.
20 Dunets B., Kravtsiv M., Vynnyk I., Kovalskiy A., Mrooz O., Shpotyuk O. Humidity sensors on the base of ceramic materials. Elektronika, 1998, vol. XXXIX, No 7-8, p. 30-32.
19 Vakiv M.M., Shpotyuk O.I., Mrooz O.Ya., Hadzaman I.V., Kovalskiy A.P. Electrical conductivity studies of temperature sensitive materials based on Mn, Ni, Co and Cu-containing spinels. Bulletin of Lviv University, Part physical, v. 31: Physics and Chemistry of Electronic Materials, 1998, p. 142-144.(in Ukrainian)
18 Shpotyuk O.I., Kovalskiy A.P., Golovchak R.Ya. Role of surface in static radiation-induced changes of optical properties of chalcogenide vitreous semiconductors. Problems of Atomic Science & Technique, v. 6-7, 1998, p. 260-262. (in Russian)
17 Vakiv M.M., Shpotyuk O.I., Golovchak R.Ya., Kovalskiy A.P., Balitska V.O. Radiation-stimulated changes of spectral characteristics of transmission in chalcogenide glasses of As2S3-Ge2S3 system. Bulletin of Lviv University, Part physical. V. 31: Physics and Chemistry of Electronic Materials, 1998, p. 20-22. (in Ukrainian)
16 Shpotyuk O.I., Vakiv M.M., Matkovskii A.O., Kovalski A.P. Radiation-induced paramagnetic centers in amorphous chalcogenide semiconductors. Opto-Electronics Review, 1997, V.5, No 1, p. 39-41.
15 Shpotyuk O.I., Kovalskiy A.P. Thin film radiation-sensitive elements on the base of amorphous chalcogenides. Scientific Works of Ukrainian Vacuum Society, V.3, 1997, p. 179-181. (in Russian)
14 Hadzaman I.V., Kovalsky A.P., Mrooz O.Ya., Shpotyuk O.I. Thermal modification of ceramic composites based on manganese-containing cube spinels. Materials Letters, 1996, V.29, p.195-198.
13 Shpotyuk O.I., Matkovskii A.O., Kovalsky A.P., Vakiv M.M. Radiation-induced changes of amorphous As2S3 physical properties. Radiation Effects and Defects in Solids, 1995, v. 133, No 1, p. 1-4.
12 Shpotyuk O.I., Kovalsky A.P., Vakiv M.M., Mrooz O.Ya. Reversible radiation effects in vitreous As2S3. 1. Changes of physical properties. Physica Status Solidi A, 1994, v. 144, No 2, p. 277-283.
11 Vakiv M.M., Veremeychuk M.S., Hadzaman I.V., Kovalskiy A.P., Mrooz O.Ya., Shpotyuk O.I. Electrophysical properties and microstructure of semiconducting oxide ceramics of MnCo2O4-CuMn2O4-NiMn2O4 system. Bulletin of Lviv University, Part chemical. V. 33: Problems of crystal chemistry of intermetallic compounds and chemical analysis of metals. 1994, p. 8-11. (in Ukrainian)
10 Kovalskiy A.P., Minaev V.S., Sawicki I.V., Shpotyuk O.I. Radiation-stimulated changes of optical transmission in chalcogenide glasses of As2Se3Bix system. Optoelectronics and Semiconducting Technique, 1991, v. 19, p. 81-85. (in Russian)
9 Shpotyuk O.I., Vakiv N.M., Kornelyuk V.M., Kovalskiy A.P. Solid state sensors of ionizing irradiation based on amorphous chalcogenides of arsenic. Metrology, 1991, No 9, p. 15-18.
8 Kovalskiy A.P., Minaev V.S., Sawicki I.V., Shpotyuk O.I. Impurity absorption in bismuth-containing glasses based on arsenic selenide. Physical Electronics, v.41. 1990, p. 3-5.
7 Kovalskiy A.P. Influence of gamma-irradiation on optical transmission spectra of As2Se3Bix chalcogenide glasses. Bulletin of Lviv University, Part physical. V. 22: Physical Materials Science, 1989, p. 85-88. (in Ukrainian)
6 Shpotyuk O.I., Sawicki I.V., Kovalskiy A.P. Physical features of revealing of radiation-stimulated effects in vitreous arsenic selenides. Physical Electronics, v.39. 1989, p. 59-64. (in Russian)
5 Kovalskiy A.P., Minaev V.S., Shpotyuk O.I. On some features of bismuth impurity influence on the microhardness of arsenic selenide. Electronic Technique. Part 6: Materials. 1988, v.7, p. 61-62. (in Russian)
4 Shpotyuk O.I., Kovalskiy A.P. Investigation of photoelectrical properties of vitreous semiconductors based on arsenic triselenide. Physical Electronics, v.37. 1988, p. 95-99. (in Russian)
3 Kovalskiy A.P., Minaev V.S., Sawicki I.V., Shpotyuk O.I. Vibrational spectra of impurity absorption in bismuth-containing glasses based on arsenic triselenide. Journal of Applied Spectroscopy. 1988, 7 p. Deposited in VINITI June 20 1988, No 4850-88. (in Russian)
2 Shpotyuk O.I., Sawicki I.V., Matkovskii A.O., Kovalskiy A.P., Kornelyuk V.M. Photoconductivity of the vitreous alloys based on arsenic triselenide. Bulletin of Lviv University, Part physical. V.20: Problems of condensed matter physics. 1986, p. 60-64. (in Russian)
1 Matkovskii A.O., Shpotyuk O.I., Sawicki I.V., Kovalskiy A.P., Osypenko L.V. Optical and photoelectrical properties of the chalcogenide glasses of (As2Se3)x(Sb2Se3)1-x system. Reports of Academy of Sciences of Ukrainian SSR, series A, 1984, No 9, p. 80-84. (in Russian)